Ferroelectricity in Doped Hafnium Oxide
  • Author : Uwe Schroeder
  • Release Date : 01 April 2019
  • Publisher : Woodhead Publishing Limited
  • Genre : Technology & Engineering
  • Pages : 570
  • ISBN 13 : 0081024304

Ferroelectricity in Doped Hafnium Oxide Book Summary

Ferroelectricity in Doped Hafnium Oxide: Materials, Properties and Devices covers all aspects relating to the structural and electrical properties of HfO2 and its implementation into semiconductor devices, including a comparison to standard ferroelectric materials. The ferroelectric and field-induced ferroelectric properties of HfO2-based films are considered promising for various applications, including non-volatile memories, negative capacitance field-effect-transistors, energy storage, harvesting, and solid-state cooling. Fundamentals of ferroelectric and piezoelectric properties, HfO2 processes, and the impact of dopants on ferroelectric properties are also extensively discussed in the book, along with phase transition, switching kinetics, epitaxial growth, thickness scaling, and more. Additional chapters consider the modeling of ferroelectric phase transformation, structural characterization, and the differences and similarities between HFO2 and standard ferroelectric materials. Finally, HfO2 based devices are summarized. Explores all aspects of the structural and electrical properties of HfO2, including processes, modelling and implementation into semiconductor devices Considers potential applications including FeCaps, FeFETs, NCFETs, FTJs and more Provides comparison of an emerging ferroelectric material to conventional ferroelectric materials with insights to the problems of downscaling that conventional ferroelectrics face

Ferroelectricity in Doped Hafnium Oxide

Ferroelectricity in Doped Hafnium Oxide

Author : Uwe Schroeder,Cheol Seong Hwang,Hiroshi Funakubo
Publisher : Woodhead Publishing Limited
Genre : Technology & Engineering
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File Size : 55,7 Mb
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Ferroelectricity in Doped Hafnium Oxide: Materials, Properties and Devices covers all aspects relating to the structural and electrical properties of HfO2 and its implementation into semiconductor devices, including a comparison to standard ferroelectric materials. The ferroelectric and field-induced ferroelectric properties of HfO2-based films are considered promising for various applications, ...

Ferroelectricity in Doped Hafnium Oxide

Ferroelectricity in Doped Hafnium Oxide

Author : Uwe Schroeder,Cheol Seong Hwang,Hiroshi Funakubo
Publisher : Woodhead Publishing
Genre : Technology & Engineering
Total View : 1040 Views
File Size : 52,8 Mb
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Ferroelectricity in Doped Hafnium Oxide: Materials, Properties and Devices covers all aspects relating to the structural and electrical properties of HfO2 and its implementation into semiconductor devices, including a comparison to standard ferroelectric materials. The ferroelectric and field-induced ferroelectric properties of HfO2-based films are considered promising for various applications, ...

Negative Capacitance in Ferroelectric Materials

Negative Capacitance in Ferroelectric Materials

Author : Michael Hoffmann
Publisher : BoD – Books on Demand
Genre : Technology & Engineering
Total View : 2985 Views
File Size : 53,7 Mb
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This dissertation investigates the phenomenon of negative capacitance in ferroelectric materials, which is promising for overcoming the fundamental limits of energy efficiency in electronics. The focus of this dissertation is on negative capacitance in hafnium oxide based ferroelectrics and the impact of ferroelectric domain formation....

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Author : Evelyn Tina Breyer
Publisher : BoD – Books on Demand
Genre : Technology & Engineering
Total View : 8782 Views
File Size : 53,5 Mb
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Publisher : Springer Nature
Genre : Technology & Engineering
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This book provides comprehensive coverage of the materials characteristics, process technologies, and device operations for memory field-effect transistors employing inorganic or organic ferroelectric thin films. This transistor-type ferroelectric memory has interesting fundamental device physics and potentially large industrial impact. Among various applications of ferroelectric thin films, the development of nonvolatile ...

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Publisher : Woodhead Publishing
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Memristive Devices for Brain-Inspired Computing: From Materials, Devices, and Circuits to Applications—Computational Memory, Deep Learning, and Spiking Neural Networks reviews the latest in material and devices engineering for optimizing memristive devices beyond storage applications and toward brain-inspired computing. The book provides readers with an understanding of four key concepts, ...

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Publisher : John Wiley & Sons
Genre : Science
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ICICS-2020 is the third conference initiated by the School of Electronics and Electrical Engineering at Lovely Professional University that explored recent innovations of researchers working for the development of smart and green technologies in the fields of Energy, Electronics, Communications, Computers, and Control. ICICS provides innovators to identify new opportunities ...